Course details (2022-23 Fall Semester)

In charge of the course: Dr. Ferenc Simon

Department: BME Department of Physics

Code: BMETE11MF26

Type: An optional course of the BME TTK physics MSc studies

Requirements: 2/0/0/V/3

Language: English

Prerequisites: Fundamentals of solid state physics (BMETE11AF05)

Other expectations: A firm knowledge in electrodynamics, quantum mechanics, and solid state physics. Introductory knowledge into statistical physics is also expected.

Evaluation: oral exam (can be optionally in Hungarian)

Learning aid: Those who has not learnt solid state physics, this textbook is recommended:  Steven H. Simon - The Oxford Solid State Basics and the related Podcasts: https://podcasts.ox.ac.uk/series/oxford-solid-state-basics
 

Study Materials: 

https://teams.microsoft.com/l/team/19%3aW9gJK3650SUZcxKe8GqHTsEuJ2HP8afD...

All students are requested to join the TEAMS

Lecture Notes

J. Volk Lecture Notes 1, Devices and Applications

J. Volk Lecture Notes 2, HEMT, Synthesis, Trends

Notes of András Szegleti (2017, Hungarian)

Notes of Szilvia Mucza (2017, Hungarian)

Notes of Noémi Vargha (2018, English)

Notes of Péter Sári (2019, English)

Worked out exam questions of Dávid Egri (2019, English)

Notes of Lilia Bató (2019, English)

Exam thematics:

1. Fundamentals of semiconductors, conductivity, structure, band structure, hybridization, basic notions (bands, gap, transition, doping, etc.).
2. Charge carriers in intrinsic semiconductors, DOS, chemical potential, conductivity in intrinsic semiconductors, the Drude model and charge carrier mobility.
3. Charge carriers in extrinsic semiconductors, energy structure and occupation of donor levels. Degenerate semiconductors. Conductivity of doped semiconductors.
4. Band structure calculation methods in semiconductors. Distinguished points of the k-space, empty lattice, quasiclassical electron approximation, the tight-binding method.
5. The k.p model and the envelope function aproximation. Relevance for doping.
6. Transport processes in semiconductors. Length scales, wave-packet, the semiclassical approximation. The Boltzmann equation and the relaxation time approximation.
7. Solution of the Boltzmann equation in a homogeneous electric field, correspondence to the Drude model. Mechanisms of the momentum relaxation, Matthiesen-rule. The Bloch-Grünneisen formula and its limiting cases.
8. Magnetotransport in semiconductors, the classical Hall effect, magnetoresistance.
9. Thermoelectric effects, reciprocal relations and coefficients, the Onsager relations, the Seebeck and Peltier effects, the Kelvin expression. The operation of the thermoelectric (Peltier) cooler.
10. Diffusion effects in semiconductors, minority charge carriers, charge carrier concentration under non-equilibrium conditions and in inhomogeneous semiconductors. The charge carrier diffusion length.
11. The p-n junction in biased and non-biased conditions. Rectification effect of diodes, the Schottky approximation and the Shockley law.
12. Description of special diode types (avalanche breakdown, Zener effect and the Esaki diode). Application of the Esaki diode. The bipolar transistor and its operation. Analogue electron tube devices.
13. Surface states, metal-semiconductor heterojunctions, the Schottky barrier. Operation of the Schottky diode. The inversion and accummulation layer.
14. Fundamentals of JFET and MOSFET. CMOS based circuits, the CMOS NOT gate.
15. Optical properties of semiconductors, the generalized dielectric function. Plasma oscillations, the AC conductivity, optical applications of semiconductors. The LED, laser diode and photovoltaic devices.

Link to the previos TEAMS:

2021-22:
https://teams.microsoft.com/l/team/19%3aJ88YberghbxckzjYuDDwdcFsZpy9q8NL...