Physics Prize for Sándor Bordács

Associate professor of BME Institute of Physics received the prize from the Hungarian Academy of Sciences for his outstanding research activities. Congratulations!


Sándor Bordács, head of the Complex Magnetism Research Group of the BME Department of Physics, is an outstanding researcher in modern optics and solid-state physics, advancing the field with creative experiments as well as theoretical models. He has discovered and explained numerous novel optical phenomena, with relevance for optical communication and data storage, acknowledged and highly recognized by the international community of his field. 
Home page of Sándor Bordács:
Home page of the Complex Magnetism Research Group:

Ultra-long spin lifetime in graphite

New experimental results from the BME Institute of Physics, published in Nature Communications, open new perspectives in the spintronics applications of graphite. 


B. G. Márkus, M. Gmitra, B. Dóra, G. Csősz, T. Fehér, P. Szirmai, B. Náfrádi, V. Zólyomi, L. Forró, J. Fabian & F. Simon 
Ultralong 100 ns spin relaxation time in graphite at room temperature
Nature Communications 14, 2831 (2023) 

Why does time flow?

The next Science Campus lecture for high school students is coming! Gábor Takács, professor of the BME Department of Physics, discusses one of the most fundamental questions of physics: Why does time flow? Join in! 
Gábor Takács
Why does time flow?
public lecture in BME's Science Campus outreach series, in Hungarian
March 31, 2023, Friday, 16:00
BME F building, Budafoki út 8., 2nd floor, lecture hall F3213
Broadcasted online on Galileo Webcast:  
A recent appearance of Gábor Takács, discussing the same topic in the "Multiverzum" series of the Hungarian state television MTV:

New paper in Nature Communications

A recent study from Ádám Gali’s research group, published in Nature Communications, has proven that the kinetics of defect complex formation in semiconductors may prohibit reaching thermal equilibrium. This could change defect engineering simulation strategies for next generation quantum computing and other applications. From the research group, spread accross at the Wigner Research Centre for Physics and the BME Department of Atomic Physics, the BME co-authors of the publication are research associate Péter Udvarhely and professor Ádám Gali. 
Peter Deák, Péter Udvarhelyi, Gergő Thiering, and Adam Gali

Point defects in semiconductors and insulators play a pivotal role in electronic, photovoltaic and optical devices. Recently, point defects in solids have emerged as main actors in quantum technology hardware elements, where the tight control of their location is of utmost importance [1]. With today's fabrication techniques, point defects can be deterministically placed into the host material, even those that do not form in nature. The implantation and irradiation techniques revolutionized materials science and industrial sectors relying on it. However, irradiation techniques often introduce mobile defects beside the target quantum hardware defects that can combine with each other and form stable complex configurations. Understanding the atomistic processes behind the formation and the stability of the target defect and parasitic complexes paves the way to realize reliable devices. Furthermore, the urgent quest to find novel solutions, e.g., seeking point defects for given functionalities, for the emerging technologies calls for atomistic simulation techniques that have high predictive power and can guide the research and development directions [2,3]. Recent developments in search algorithms and the increasing computation power have directed the computational discovery of target point defects to the application of machine learning techniques. The vast majority of point defects are complexes that may exist in various configurations, and current machine learning algorithms are conditioned to find the energetically most stable defects configuration for the given applications. It is a common assumption that the most stable defect complexes will form, i.e., the thermal equilibrium of the defect complex configurations can be eventually reached.
Ádám Gali’s group has demonstrated by means of accurate atomistic simulations that the kinetics of the formation of defect complex configurations can prohibit to reach the thermal equilibrium [4]. In particular, this effect has been exemplified on a key defect complex in silicon which can be a basic unit for future quantum communication and quantum computation devices. The results imply that the machine learning techniques conditioned to search for thermal equilibrium defect complexes would overlook a key candidate for quantum technology applications. This study may turn the attention to the importance of kinetics in the simulation of implanted or irradiated semiconductors for defect engineering.  
[1] Quantum guidelines for solid-state spin defects
, Gary Wolfowicz, F. Joseph Heremans, Christopher P. Anderson, Shun Kanai, Hosung Seo, Adam Gali, Giulia Galli, David D. Awschalom
, Nature Reviews Materials 6, 906 (2021).
[2] Ab initio theory of the nitrogen-vacancy center in diamond
, Adam Gali
, Nanophotonics 8 1907 (2019).
[3] Recent advances in the ab initio theory of solid-state defect qubits, 
Ádám Gali
, Nanophotonics, on-line (2023).
[4] The kinetics of carbon pair formation in silicon prohibits reaching thermal equilibrium
, Peter Deák, Péter Udvarhelyi, Gergő Thiering, Adam Gali
, Nature Communications 14, 361 (2023).


ERC Consolidator Grant for Péter Makk

The European Research Council awarded almost 2 million euros to support the nanoelectronics research of Péter Makk, associate professor of the BME Insitute of Physics. Congratulations!


News item in Hungarian, at


Web page of the Momentum Research Group of Péter Makk:


Results of the ERC Consolidator Grant 2022: