Course details (201920 Fall Semester)
In charge of the course: Dr. Ferenc Simon
Department: BME Department of Physics
Code: BMETE11MF26
Type: An optional course of the BME TTK physics MSc studies
Requirements: 2/0/0/V/3
Language: English
Prerequisites: Fundamentals of solid state physics (BMETE11AF05)
Other expectations: A firm knowledge in electrodynamics, quantum mechanics, and solid state physics. Introductory knowledge into statistical physics is also expected.
Evaluation: oral exam (can be optionally in Hungarian)
Learning aid: Those who has not learnt solid state physics, this textbook is recommended: Steven H. Simon  The Oxford Solid State Basics and the related Podcasts: https://podcasts.ox.ac.uk/series/oxfordsolidstatebasics
Exam thematics:

Fundamentals of semiconductors, conductivity, structure, band structure, hybridization, basic notions (bands, gap, transition, doping, etc.).

Charge carriers in intrinsic semiconductors, DOS, chemical potential, conductivity in intrinsic semiconductors, the Drude model and charge carrier mobility.

Charge carriers in extrinsic semiconductors, energy structure and occupation of donor levels. Degenerate semiconductors. Conductivity of doped semiconductors.

Band structure calculation methods in semiconductors. Distinguished points of the kspace, empty lattice, quasiclassical electron approximation, the tightbinding method.

The k.p model and the envelope function aproximation. Relevance for doping.

Transport processes in semiconductors. Length scales, wavepacket, the semiclassical approximation. The Boltzmann equation and the relaxation time approximation.

Solution of the Boltzmann equation in a homogeneous electric field, correspondence to the Drude model. Mechanisms of the momentum relaxation, Matthiesenrule, the Eliashbergfunction. The BlochGrünneisen formula and its limiting cases.

Magnetotransport in semiconductors, the classical Hall effect, magnetoresistance.

Thermoelectric effects, reciprocal relations and coefficients, the Onsager relations, the Seebeck and Peltier effects, the Kelvin expression. The operation of the thermoelectric (Peltier) cooler.

Diffusion effects in semiconductors, minority charge carriers, charge carrier concentration under nonequilibrium conditions and in inhomogeneous semiconductors. The charge carrier diffusion length.

The pn junction in biased and nonbiased conditions. Rectification effect of diodes, the Schottky approximation and the Shockley law.

Description of special diode types (avalanche breakdown, Zener effect and the Esaki diode). Application of the Esaki diode. The bipolar transistor and its operation. Analogue electron tube devices.

Surface states, metalsemiconductor heterojunctions, the Schottky barrier. Operation of the Schottky diode. The inversion and accummulation layer.

Fundamentals of JFET and MOSFET. CMOS based circuits, the CMOS NOT gate.